[2024 OPEN ACCESS]
Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
2024 Appl. Phys. Express 17 111001

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[Open Access]
(10–13)-oriented semipolar GaN growth on (10–10) m-plane ScAlMgO4 substrate
2024 Jpn. J. Appl. Phys. 63 101001

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#GaN
#MOVPE
#semipolar