[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001

iopscience.iop.org/article/10.3...

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#dioxide
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#diode
#powerdevice
#CVD

[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503

iopscience.iop.org/article/10.3...

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#breakdown
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[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502

iopscience.iop.org/article/10.3...

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#Physics
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#MOSFET

EPC Unveils EPC2366: Next-Gen 40 V GaN Power Device for High-Efficiency Power Conversion The new GaN power device is engineered to replace legacy low-voltage silicon MOSFETs in demanding power applications.

EPC Unveils EPC2366: Next-Gen 40 V #GaN #PowerDevice for High-Efficiency #PowerConversion

Nexperia Expands Planar Schottky Diode Portfolio with 16 Low VF Devices in Compact CFP2-HP Package The new planar Schottky diodes provide superior heat dissipation while still maintaining small footprint.

Nexperia Expands Planar #SchottkyDiode Portfolio with 16 Low VF Devices in Compact CFP2-HP Package #powerdevice #powerelectronics